I think you're jumping to conclusions.
It's not really 3 gates as far as I can tell from your pic. Looks like 1 gate with 3 planes. Kind of like a stranded wire vs a solid wire.
Currently it seems to be more leaky, not less.
I'm hoping the next major stepping will be like Q6600 B3 to G0. Better OCing on air, lower voltages, and much cooler. Just need to work out the kinks.
http://www.pcmag.com/article2/0,2817,2384909,00.asp
QUOTE:
Tri-Gate explained. The Tri-Gate technology gets its name from the fact that transistors using it have conducting channels that are formed on all three sides—two on each side, one across the top—of a tall and narrow silicon fin that rises vertically from the silicon substrate. On a traditional two-dimensional, or "planar," transistor, the gate runs just across the top. But on the vertical fin, transistors can be packed closer together. This provides enough extra control to
allow more transistor current to flow when the transistor is on,
almost zero when it is off, and gives the transistor the ability to switch quickly between the two states.
Transistors leak power when there off.
So there is more current flow with the 3 gates when it's on and less leakage when it's off.
A simple revision is not going to change the new 3 gate properties, i think people are getting there hopes up like they did with bulldozer.
There are tradeoffs when making tri-gate transistor you get less leakage however you get 3 separate planes that use more power in one transistor.
A tri-gate transistor is not that amazing it's just 3 sided vertical gate transistor in one, intel came up with the idea in 2002
If they would have used a single vertical fin through the gate it would use less power.
When they went from 45nm to 32nm the power savings scaled just as much as IB 22nm, that's what i see.
AMD has the record in transistor cpu clock speed.